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1 UT54ACS14E/ut54acts14e hex inverting schmitt triggers july, 2013 www.aeroflex.com/logic datasheet features ? ???? m crh cmos process - latchup immune ? high speed ? low power consumption ? wide power supply operating range of 3.0v to 5.5v ??? available qml q or v processes ? 14-lead flatpack ? UT54ACS14E - smd 5962-96524 ? ut54acts14e - smd 5962-96525 function table logic symbol description the UT54ACS14E and the ut54acts14e are hex inverters with schmitt trigger inputs. the circuits perform the boolean function y = a . the devices are characterized over full hirel temperature range of -55 ? c to +125 ? c. pinouts 14-lead flatpack top view logic diagram input output a y h l l h y1 y2 y3 y4 (1) a1 (5) a3 (11) a5 (13) a6 note: 1. logic symbol in accordance with ansi/ieee standard 91-1984 and iec publication 617-12. 1 (3) a2 (9) a4 (2) (10) (12) (4) (8) y5 y6 (6) v dd a6 y6 a5 y5 a4 y4 a1 y1 a2 y2 a3 y3 v ss 114 213 312 411 510 69 78 y4 y3 y1 y2 y6 y5 a4 a3 a1 a2 a6 a5
2 operational environment 1 notes: 1. logic will not latchup during radiation ex posure within the limits defined in the table. 2. device storage elements are immune to seu affects. absolute maximum ratings note: 1. stresses outside the listed absolute maxi mum ratings may cause permanent damage to the device. this is a stress rating only, functional operation of the device at these or any other conditions beyond lim its indicated in the operational sections is not recommended. exposure to absolute maximum ra ting conditions for extended periods may affect device reliability. 2. per mil-std-883, method 1012.1, section 3.4.1, p d = (t j(max) - t c(max) ) / ? jc recommended operating conditions parameter limit units total dose 1.0e6 rads(si) seu threshold 2 80 mev-cm 2 /mg sel threshold 108 mev-cm 2 /mg neutron fluence 1.0e14 n/cm 2 symbol parameter limit units v dd supply voltage -0.3 to 7.0 v v i/o voltage any pin -0.3 to v dd + 0.3 v t stg storage temperature range -65 to +150 ? c t j maximum junction temperature +175 ? c t ls lead temperature (soldering 5 seconds) +300 ? c ? jc thermal resistance junction to case 15 ? c/w i i dc input current ? 10 ma p d maximum package power dissipation permitted @ tc = +125 o c 3.3 w symbol parameter limit units v dd supply voltage 3.0 to 5.5 v v in input voltage any pin 0 to v dd v t c temperature range -55 to +125 ? c
3 dc electrical characteris tics for the UT54ACS14E 7 ( v dd = 3.0v to 5.5v; v ss = 0v 6 ; -55 ? c < t c < +125 ? c) symbol description condition min max unit v t+ schmitt trigger positive-going threshold 1 v dd from 3.0v to 5.5v 0.7v dd v v t- schmitt trigger negative-going threshold 1 v dd from 3.0v to 5.5v 0.3v dd v v h1 range of hysteresis (v t+ - v t- ) v dd from 4.5v to 5.5v 0.6 1.5 v v h2 range of hysteresis (v t+ - v t- ) v dd from 3.0v to 3.6v 0.3 1.2 v i in input leakage current v in = v dd or v ss -1 1 ? a v ol low-level output voltage 3 i ol = 100 ? a v dd from 3.0v to 5.5v 0.25 v v oh high-level output voltage 3 i oh = -100 ? a v dd from 3.0v to 5.5v v dd - 0.25 v i os1 short-circuit output current 2 ,4 v o = v dd and v ss v dd from 4.5v to 5.5v -200 200 ma i os2 short-circuit output current 2 ,4 v o = v dd and v ss v dd from 3.0v to 3.6v -100 100 ma i ol1 low level output current 9 (sink) v in = v dd or v ss v ol = 0.4v v dd from 4.5v to 5.5v 8 ma i ol2 low level output current 9 (sink) v in = v dd or v ss v ol = 0.4v v dd from 3.0v to 3.6v 6 ma i oh1 high level output current 9 (source) v in = v dd or v ss v oh = v dd - 0.4v v dd from 4.5v to 5.5v -8 ma i oh2 high level output current 9 (source) v in = v dd or v ss v oh = v dd - 0.4v v dd from 3.0v to 3.6v -6 ma
4 notes: 1. functional tests are conducted in accordance with mil-std-883 with th e following input test conditions: v ih = v ih (min) + 20%, - 0%; v il = v il (max) + 0%, - 50%, as specified herein, for ttl, cmos, or schmitt compatible inputs. devices may be tested using any input voltage within the above specified range, but are guaranteed to v ih (min) and v il (max). 2. supplied as a design limit but not guaranteed or tested. 3. per mil-prf-38535, for current density ? 5.0e5 amps/cm 2 , the maximum product of load capac itance (per output buffer) times fre quency should no t exceed 3,765pf/ mhz. 4. not more than one output may be shorted at a time for maximum duration of one second. 5. capacitance measured for initial qualifica tion and when design changes may affect th e value. capacitance is measured between the designated terminal and v ss at frequency of 1mhz and a signal amplitude of 50 mv rms maximum. 6. maximum allowable relative shift equals 50mv. 7. all specifications valid for radiation dose ? 1e6 rads(si) per mil-std-883 method 1019. 8. power dissipation specifi ed per switching output. 9. guaranteed by characterization, but not tested. p total1 power dissipation 2, 8 c l = 50pf v dd from 4.5v to 5.5v 1.9 mw/ mhz p total2 power dissipation 2, 8 c l = 50pf v dd from 3.0v to 3.6v 0.76 mw/ mhz i ddq quiescent supply current v in = v dd or v ss v dd from 3.0v to 5.5v 10 ? a c in input capacitance 5 ? = 1mhz, v dd = 0 15 pf c out output capacitance 5 ? = 1mhz, v dd = 0 15 pf
5 ac electrical characteristics for the UT54ACS14E 2 (v dd = 3.0v to 5.5v; v ss = 0v 1 , -55 ? c < t c < +125 ? c) notes: 1. maximum allowable relative shift equals 50mv. 2. all specifications va lid for radiation dose ? 1e6 rads(si) per mil-std-883 method 1019. symbol parameter condition v dd minimum maximum unit t phl input to yn c l = 50pf 3.0v to 3.6v 2 18 ns 4.5v to 5.5v 2 18 ns t plh input to yn c l = 50pf 3.0v to 3.6v 2 17 ns 4.5v to 5.5v 2 13 ns
6 dc electrical characteristics for the ut54acts14e 7 ( v dd = 3.0v to 5.5v; v ss = 0v 6 ; -55 ? c < t c < +125 ? c) symbol description condition min max unit v t+1 schmitt trigger positive-going threshold 1 v dd from 4.5v to 5.5v 2.25 v v t+2 schmitt trigger positive-going threshold 1 v dd from 3.0v to 3.6v 2.0 v v t-1 schmitt trigger negative-going threshold 1 v dd from 4.5v to 5.5v 0.5 v v t-2 schmitt trigger negative-going threshold 1 v dd from 3.0v to 3.6v 0.5 v v h1 range of hysteresis (v t+1 - v t-1 ) v dd from 4.5v to 5.0v 0.4 1.5 v v h2 range of hysteresis (v t+2 - v t-2 ) v dd from 3.0v to 3.6v 0.2 1.2 v i in input leakage current v in = v dd or v ss -1 1 ? a v ol1 low-level output voltage 3 i ol = 8ma v dd from 4.5v to 5.5v 0.4 v v ol2 low-level output voltage 3 i ol = 6ma v dd from 3.0v to 3.6v 0.4 v v oh1 high-level output voltage 3 i oh = -8ma v dd from 4.5v to 5.5v 0.7v dd v v oh2 high-level output voltage 3 i oh = -6ma v dd from 3.0v to 3.6v 2.4 v i os1 short-circuit output current 2 ,4 v o = v dd or v ss v dd from 4.5v to 5.5v -200 200 ma i os1 short-circuit output current 2 ,4 v o = v dd or v ss v dd from 3.0v to 3.6v -100 100 ma i ol1 low level output current 9 v in = v dd or v ss v ol = 0.4v v dd from 4.5v to 5.5v 8 ma i ol2 low level output current 9 v in = v dd or v ss v ol = 0.4v v dd from 3.0v to 3.6v 6 ma
7 notes: 1. functional tests are conducted in accordance with mil-std-883 with th e following input test conditions: v ih = v ih (min) + 20%, - 0%; v il = v il (max) + 0%, - 50%, as specified herein, for ttl, cmos, or schmitt compatible inputs. devices may be tested using any input voltage within the above specified range, but are guaranteed to v ih (min) and v il (max). 2. supplied as a design limit but not guaranteed or tested. 3. per mil-prf-38535, for current density ? 5.0e5 amps/cm 2 , the maximum product of load capac itance (per output buffer) times fre quency should no t exceed 3,765pf/ mhz. 4. not more than one output may be shorted at a time for maximum duration of one second. 5. capacitance measured for initial qualifica tion and when design changes may affect th e value. capacitance is measured between the designated terminal and v ss at frequency of 1mhz and a signal amplitude of 50 mv rms maximum. 6. maximum allowable relative shift equals 50mv. 7. all specifications valid for radiation dose ? 1e6 rads(si) per mil-std-883 method 1019. 8. power dissipation specifi ed per switching output. 9. guaranteed by characterization, but not tested. i oh1 high level output current 9 v in = v dd or v ss v oh = v dd -0.4v, v dd from 4.5v to 5.5v -8 ma i oh2 high level output current 9 v in = v dd or v ss v oh = v dd - 0.4v v dd from 3.0v to 3.6v -6 ma p total1 power dissipation 2, 8 c l = 50pf v dd from 4.5v to 5.5v 1.3 mw/ mhz p total2 power dissipation 2, 8 c l = 50pf v dd from 3.0v to 3.6v 0.5 mw/ mhz i ddq quiescent supply current v in = v dd or v ss v dd from 3.0v to 5.5v 10 ? a ? i ddq quiescent supply current delta for input under test v in = v dd -2.1v for all other inputs v in = v dd or v ss v dd = 5.5v 3.1 ma c in input capacitance 5 ? = 1mhz, v dd = 0 15 pf c out output capacitance 5 ? = 1mhz, v dd = 0 15 pf
8 ac electrical characteristics for the ut54acts14e 2 (v dd = 3.0v to 5.5v; v ss = 0v 1 , -55 ? c < t c < +125 ? c) notes: 1. maximum allowable relative shift equals 50mv. 2. all specifications va lid for radiation dose ? 1e6 rads(si) per mil-std-883 method 1019. symbol parameter condition v dd minimum maximum unit t phl input to yn c l = 50pf 3.0v to 3.6v 2 20 ns 4.5v to 5.5v 2 9 t plh input to yn c l = 50pf 3.0v to 3.6v 3 20 ns 4.5v to 5.5v 2 12
9 figure 1. 14-lead flatpack 1. all exposed metallized areas are gold plated over electroplated nickel per mil-prf-38535. 2. the lid is electrically connected to v ss . 3. lead finishes are in accordance with mil-prf- 38535. 4. dimension symbol is in accordance with mil- prf-38533. 5. lead position and cola narity are not measured.
UT54ACS14E/ut54acts14e: smd drawing number: 96524 = UT54ACS14E device type: 02 = 1 rad(si)/sec package type: x = 14-lead ceramic botto m-brazed dual-in-line flatpack lead finish: (notes 1 & 2) a = solder c = gold x = optional 5962 ***** ** * * * * total dose: (note 3 & 4) r = 1e5 rads(si) f = 3e5 rads(si) g = 5e5 rads(si) h = 1e6 rads(si) 03 = 50 to 300 rads(si)/sec class designator: q = qml class q v = qml class v 96525 = ut54acts14e notes: 1. lead finish (a,c, or x) must be specified. 2. if an ?x? is specified when or dering, part marking will match the lead finish an d will be either ?a? (solder) or ?c? (gold). 3. total dose radiation must be specified when ordering. qml-2 and v is not av ailable without radiation testing. for prototypin g inquiries, contact factory. 4. device type 02 is only offered with a tid tolerance guarantee of 3e5 rads(si) or 1e6 rads(si) and is tested in accordance wi th mil-std-883 test method 1019 condition a and section 3.11.2. device type 03 is only offered with a tid tolerance guaran tee of 1e5 rads(si), 3e5 rads(si), and 5e5 rads(si), and is tested in accordance with mil-std-883 test method 1019 condition a.
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